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industrial & multimarket data sheet rev. 2.0, 2010-08-27 final coolmos ce 500v coolmos? ce power transistor ipx50r380ce mosfet metal oxide semiconductor field effect transistor
drain pin 2 gate pin 1 source pin 3 500v coolmos? ce power transi stor IPP50R380CE, ipa50r380ce ipi50r380ce final data sheet 2 rev. 2.0, 2010-08-27 1 description coolmos? is a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) principle and pioneered by infineon technologi es. coolmos? ce series combines the experience of the leading sj mosfet supplier with high class innovation. the resulting devices provid e all benefits of a fast switching sj mosfet while not sacrificing ease of use. extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. features ? extremely low losses due to very low fom r dson *q g and e oss ? very high commutation ruggedness ? easy to use/drive ? jedec 1) qualified, pb-free plating, halogen free applications pfc stages, hard switching pwm st ages and resonant switching pwm stages for e.g. pc silver box, adapter, lcd & pdp tv please note: for mosfet paralleling th e use of ferrite beads on the gate or separate totem poles is generally recommended. 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit v ds @ t j,max 550 v r ds(on),max 0.38 ? q g,typ 32 nc i d,pulse 30 a e oss @ 400v 2.8 j body diode d i /d t 500 a/s type / ordering code package marking related links ipp 5 5 5
500v coolmos? ce power transistor ipx50r380ce table of contents final data sheet 3 rev. 2.0, 2010-08-27 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table of contents
500v coolmos? ce power transistor ipx50r380ce maximum ratings final data sheet 4 rev. 2.0, 2010-08-27 2 maximum ratings at t j = 25 c, unless otherwise specified. table 2maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current 1) 1) limited by t j,max. maximum duty cycle d=0.75 i d - - 10.6 a t c = 25 c 6.7 t c = 100c pulsed drain current 2) 2) pulse width t p limited by t j,max i d,pulse - - 30 a t c =25 c avalanche energy, single pulse e as - - 210 mj i d =1.8 a, v dd =50 v ? e ar - - 0.32 i d =1.8 a, v dd =50 v avalanche current, repetitive i ar - - 1.8 a mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480 v gate source voltage v gs -20 - 20 v static -30 30 ac (f>1 hz) power dissipation for fullpak p tot - - 31 w t c =25 c operating and storage temperature t j , t stg -55 - 150 c mounting torque? i s - - 9.2 a t c =25 c diode pulse current 2) i s,pulse - - 30 a t c =25 c reverse diode dv/dt 3) 3) identical low side and high side switch with identical r g dv/dt - - 15 v/ns v ds =0...480 v, i sd ? i d , ? t j =125 c maximum diode commutation spee d 3) di f /dt 500 a/s (see table 22) table 3 thermal characteristics to-220fullpak parameter symbol values unit note / te st condition min. typ. max. thermal resistance, junction - case r thjc - - 4.3 c/w thermal resistance, junction - ambient r thja - - 80 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from cas e for 10 s
500v coolmos? ce power transistor ipx50r380ce thermal characteristics final data sheet 5 rev. 2.0, 2010-08-27 3 thermal characteristics table 3 thermal characteristics to-220 & to-262 parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 1.5c/w thermal resistance, junction - ambient r thja - - 62 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 4 thermal characteristics to-220fullpak parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 4.0c/w thermal resistance, junction - ambient r thja - - 80 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s
500v coolmos? ce power transistor ipx50r380ce electrical characteristics final data sheet 6 rev. 2.0, 2010-08-27 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified table 5 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 500 - - v v gs =0 v, i d =0.25 ma gate threshold voltage v gs(th) 2.5 3 3.5 v ds = v gs , i d =0.32 ma zero gate voltage drain current i dss -- 1a v ds =500 v, v gs =0 v, t j =25 c -10- v ds =500 v, v gs =0 v, t j =150 c gate-source leakage current i gss - - 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) -0.340.38 ? v gs =10 v, i d =3.8 a, t j =25 c -0.89- v gs =10 v, i d =3.8 a, t j =150 c gate resistance r g -7.5- ? f =1 mhz, open drain table 6 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss -700- pf v gs =0 v, v ds =100 v, f =1 mhz output capacitance c oss -46- effective output capacitance, energy related 1) 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 480 v c o(er) -30- v gs =0 v, v ds =0...480 v effective output capacitance, time related 2) 2) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 480 v c o(tr) -136- i d =constant, v gs =0 v v ds =0...480v turn-on delay time t d(on) -11- ns v dd =400 v, v gs =13 v, i d =4.8a, r g =3.4 ? t r -9- turn-off delay time t d(off) -56- fall time t f -8-
500v coolmos? ce power transistor ipx50r380ce electrical characteristics final data sheet 7 rev. 2.0, 2010-08-27 table 7 gate charge characteristics parameter symbol values unit note / test condition min. typ. max. igate to source charge q gs -4- nc v dd =480 v, i d =4.8 a, v gs =0 to 10 v gate to drain charge q gd -16- gate charge total q g -32- gate plateau voltage v plateau -5.4- v table 8 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode forward voltage v sd -0.9- v v gs =0 v, i f =4.8a, t j =25 c reverse recovery time t rr -290- ns v r =400 v, i f =4.8 a, d i f /d t =100 a/s (see table 22) reverse reco very charge q rr -3.3- c peak reverse recovery current i rrm -21- a
500v coolmos? ce power transistor ipx50r380ce electrical characteristics diagrams final data sheet 8 rev. 2.0, 2010-08-27 5 electrical characteristics diagrams table 9 power dissipation non fullpak power dissipation fullpak p tot = f( t c ) p tot = f( t c ) table 10 max. transient thermal impedance non fullpak max. transient thermal impedance fullpak z (thjc) =f(tp); parameter: d=t p /t z (thjc) =f(tp); parameter: d=t p /t
500v coolmos? ce power transistor ipx50r380ce electrical characteristics diagrams final data sheet 9 rev. 2.0, 2010-08-27 table 11 safe operating area t c =25 c non fullpak safe operating area t c =25 c fullpak i d =f(v ds ); t c =25 c; d=0; parameter t p i d =f(v ds ); t c =25 c; d=0; parameter t p table 12 safe operating area t c =80 c non fullpak safe operating area t c =80 c fullpak i d =f(v ds ); t c =80 c; d=0; parameter t p i d =f(v ds ); t c =80 c; d=0; parameter t p
500v coolmos? ce power transistor ipx50r380ce electrical characteristics diagrams final data sheet 10 rev. 2.0, 2010-08-27 table 13 typ. output characteristics t j =25 c typ. output characteristics t j =125 c i d =f( v ds ); t j =25 c; parameter: v gs i d =f( v ds ); t j =125 c; parameter: v gs table 14 typ. drain-source on-state resistance drain-source on-state resistance r ds(on) =f( i d ); t j =125 c; parameter: v gs r ds(on) =f( t j ); i d =3.8 a; v gs =10 v
500v coolmos? ce power transistor ipx50r380ce electrical characteristics diagrams final data sheet 11 rev. 2.0, 2010-08-27 table 15 typ. transfer characteristics typ. gate charge i d =f( v gs ); v ds =20v v gs =f( q gate ), i d =4.8a pulsed table 16 avalanche energy min. drain-source breakdown voltage e as =f( t j ); i d =1.8 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma
500v coolmos? ce power transistor ipx50r380ce electrical characteristics diagrams final data sheet 12 rev. 2.0, 2010-08-27 table 17 typ. capacitances typ. c oss stored energy c=f( v ds ); v gs =0 v; f =1 mhz e oss =f( v ds ) table 18 forward characteristics of reverse diode i f =f( v sd ); parameter: t j
500v coolmos? ce power transistor ipx50r380ce test circuits final data sheet 13 rev. 2.0, 2010-08-27 6 test circuits table 19 switching times test circui t and waveform for inductive load switching times test circuit for i nductive load switching time waveform table 20 unclamped inductive load test circuit and waveform unclamped inductive load test circuit unclamped inductive waveform table 21 test circuit and waveform for diode characteristics test circuit for diode characteristics diode recovery waveform v ds v gs v ds v gs t d(on) t d( o f f) t r t on t f t off 10% 90% v ds i d v ds v d v (br)ds i d v ds v ds i d r g1 r g2 r g1 = r g2 f d it /d t rr 10% 90% rrm rrm t rrm v sil00088 q f v i f q s rrm v s tt f /d i d rr t rr tt s t f =+ = rr qq sf + q
500v coolmos? ce power transistor ipx50r380ce package outlines final data sheet 14 rev. 2.0, 2010-08-27 7 package outlines figure 1 outlines to-220, dimensions in mm/inches
500v coolmos? ce power transistor ipx50r380ce package outlines final data sheet 15 rev. 2.0, 2010-08-27 figure 2 outlines to-220 fullpak, dimensions in mm/inches
500v coolmos? ce power transistor ipx50r380ce package outlines final data sheet 16 rev. 2.0, 2010-08-27 figure 3 outlines to-262, dimensions in mm/inches
500v coolmos? ce power transistor ipx50r380ce revision history final data sheet 17 rev. 2.0, 2010-08-27 8 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2010-08-27 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. infineon technologies components may be used in life-suppo rt devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or sys tem. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if t hey fail, it is reasonable to assume that the health of the user or other persons may be endangered. coolmos ce 500v coolmos? ce power transistor revision history: 2010-08-27, rev. 2.0 previous revision: revision subjects (major ch anges since last revision) 2.0 release of final data sheet

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